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GFET-S12 for Sensing applications GFETGFET S12 (Die size 10 mm x 10 mm) Processed in Clean Room Class 1000 The GFET S12 chip from Graphenea provides 27 graphene devices distributed in a grid pattern on the chip. The devices have interdigitated contacts on top of the graphene channel, which are optimal for sensing of gases and volatile compounds. All the devices have the same channel length (1mm), but 3 different widths (50m, 100m and 200m). The interdigitated contacts have 3 different
This product is provided with a PMMA coating on top of the Graphene in order ease the transfer process and to avoid contamination
The GFET-S12 chip from Graphenea provides 27 graphene devices distributed in a grid pattern on the chip
· Sheet Resistance on SiO₂/Si: 430±40 Ohms/sq (1cm x1cm)
· Number of GFETs per chip: 14
1021/nn303869m
· Hydrogen: 1 – 2%
· Coaxial SMA connectors for an easy link with the measurement equipment
· Roughness: 6Å (both side polished )
· Nitrogen: 0 – 1%
the probe pads are located near the periphery of the chip
enabling immediate device optimization
Monolayer Graphene on PET - Processed in ISO 7 Cleanroom
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